sid9575 -15a , -60v , r ds(on) 90 m ? p-channel enhancement mode power mosfet elektronische bauelemente 12-may-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d h g e f k b j p m rohs compliant product a suffix of -c specifies halogen-free description the sid9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. features simple drive requirement lower on-resistance fast switching characteristic application the through-hole version (to-251) is available for low-profile applications and suited for low voltage applications such as dc / dc converters. marking: absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 25 v continuous drain current v gs =10v, t c =25 c i d -15 a v gs =10v, t c =100 c -9.5 a pulsed drain current 1 i dm -45 a total power dissipation @ t c = 25 c p d 36 w thermal resistance junction-case r jc 3.5 c / w thermal resistance junction-ambient r ja 110 c / w linear derating factor 0.29 w / c operating junction & storage temperature t j , t stg -55~150 c to-251 ref. millimeter ref. millimeter min. max. min. max. a 6.40 6.80 g 5.40 5.80 b 5.20 5.50 h 0.90 1.50 c 2.20 2.40 j 2.30 d 0.45 0.55 k 0.60 0.90 e 6.80 7.20 m 0.50 0.70 f 7.20 7.80 p 0.45 0.60 1 gate 3 source 2 drain 9575 date code
sid9575 -15a , -60v , r ds(on) 90 m ? p-channel enhancement mode power mosfet elektronische bauelemente 12-may-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min typ max unit test conditions drain-source breakdown voltage bv dss -60 - - v v gs =0, i d = -250 a breakdown voltage temperature coefficient ? bv dss / ? t j - -0.06 - v / c reference to 25c, i d = -1ma gate threshold voltage v gs(th) -1 - -3 v v ds =v gs , i d = -250 a forward trans-conductance g fs - 14 - s v ds = -10v, i d = -9a gate-source leakage current i gss - - 100 na v gs = 25v drain- source leakage current t j =25 i dss - - -1 ua v ds = -60 v, v gs =0 t j =150 - - -25 v ds = -48 v, v gs =0 static drain-source on-resistance 2 r ds(on) - - 90 m v gs = -10 v, i d = -12a - - 120 v gs = -4.5 v, i d = -9 a total gate charge 2 q g - 17 27 nc i d = -9 a v ds = -48 v v gs = -4.5 v gate-source charge q gs - 5 - gate-drain (miller) charge q gd - 6 - turn-on delay time 2 t d(on) - 10 - ns v ds = -30 v i d = -9 a v gs = -10 v r g =3.3 r d =3.3 rise time t r - 19 - turn-off delay time t d(off) - 46 - fall time t f - 53 - input capacitance c iss - 1660 2660 pf v gs =0 v ds = -25v f =1 mhz output capacitance c oss - 160 - reverse transfer capacitance c rss - 100 - source-drain diode forward on voltage 2 v sd - - -1.2 v i s = -9a, v gs =0 reverse recovery time 2 t rr - 56 - ns i s = -9 a, v gs =0 dl/dt=100a / s reverse recovery charge q rr - 159 - nc notes: 1. pulse width limited by safe operating area. 2. pulse width Q 300us, duty cycle Q 2% .
sid9575 -15a , -60v , r ds(on) 90 m ? p-channel enhancement mode power mosfet elektronische bauelemente 12-may-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
sid9575 -15a , -60v , r ds(on) 90 m ? p-channel enhancement mode power mosfet elektronische bauelemente 12-may-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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